000			01957cam a22002778i 4500
003			OSt
005			20231227161734.0
008			210707s2022 enk b 001 0 eng
020			_a9781108480024
040			_c
082	0	0	_a621.395 _bTAU / B
100	1		_aTaur, Yuan _eAuthor
245	1	0	_aFundamentals of modern VLSI devices
250			_a3rd ed.
264		1	_aNew York : _bCambridge University Press, _c©2022.
300			_axxvii, 597 p. : _bill (b&w) ; _c25 cm (Hardbound)
336			_atext _btxt _2rdacontent
504			_aIncludes bibliographical references and index.
520			_a"A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, shortchannel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry"-- _cProvided by publisher.
653			_aMetal oxide semiconductors, Complementary
653			_aIntegrated circuits--Very large scale integration
653			_aBipolar transistors
653			_aBipolar integrated circuits
700	1		_aNing, Tak H. _eAuthor
942			_2ddc _cBK
999			_c3917 _d3917