TY  - BOOK
AU  - Taur,Yuan
AU  - Ning,Tak H.
TI  - Fundamentals of modern VLSI devices 
SN  - 9781108480024
U1  - 621.395 
PY  - 2022///
CY  - New York
PB  - Cambridge University Press
KW  - Metal oxide semiconductors, Complementary
KW  - Integrated circuits--Very large scale integration
KW  - Bipolar transistors
KW  - Bipolar integrated circuits
N1  - Includes bibliographical references and index
N2  - "A thoroughly updated third edition of a classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, shortchannel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry"--
ER  -